Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures

Journal of Crystal Growth

Volumn 310, Issue 7-9, 2008, Pages 2229-2233

  Hulicius, Eduard ^a   Oswald, Jiří ^a   Pangrác, Jiří ^a   Vyskočil, Jan ^a,b   Hospodková, Alice ^a   Kuldová, Karla ^a   Melichar, Karel ^a   Šimeček, Tomislav ^a  

^a INSTITUTE OF PHYSICS   (Czech Republic)

^b CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

Author keywords

A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III V materials

Indexed keywords

GROWTH (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURES; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS;

ROOM TEMPERATURE; STRAIN-REDUCING LAYERS (SRL);

SEMICONDUCTOR QUANTUM DOTS;

EID: 41449111998     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.055     Document Type: Article

References (7)

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