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Volumn 66, Issue 23, 2002, Pages 2353071-23530712

Many-body levels of optically excited and multiply charged InAs nanocrystals modeled by semiempirical tight binding

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; CHEMICAL BINDING; CRYSTAL; ELECTRON; MODEL; MOLECULAR INTERACTION; NANOPARTICLE; OSCILLATION; POLARIMETRY; POLARIZATION; SCANNING ELECTRON MICROSCOPY;

EID: 0037115976     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (54)

References (46)
  • 4
    • 0003978311 scopus 로고    scopus 로고
    • edited by D. Bimberg, M. Grundmann, and N. Ledentsov, (Wiley, Chichester)
    • Quantum Dot Heterostructures edited by D. Bimberg, M. Grundmann, and N. Ledentsov, (Wiley, Chichester, 1998).
    • (1998) Quantum Dot Heterostructures
  • 31
    • 33646620367 scopus 로고    scopus 로고
    • note
    • The energy of the hole level is the negative of the corresponding single-particle level. The hole wave function is the conjugate of the single-particle wave function, following the second quantization model in which a hole state is a state resulting from an annihilation operator applied to an occupied single-particle level. In addition, the spin of hole state is the opposite of that of the single-particle level.
  • 34
    • 33646622407 scopus 로고
    • edited by P. M. Fauchet, C. C. Tsai, L. T. Canham, I. Shimizu, and Y. Aoyagi, Mater. Res. Soc. Symp. Proc. No. 283 (Materials Research Society, Pittsburgh)
    • R. Tsu, L. Ioriatti, J. Harvey, H. Shen, and R. Lux, in Microcrystalline Semiconductors: Materials Science and Devices, edited by P. M. Fauchet, C. C. Tsai, L. T. Canham, I. Shimizu, and Y. Aoyagi, Mater. Res. Soc. Symp. Proc. No. 283 (Materials Research Society, Pittsburgh, 1993).
    • (1993) Microcrystalline Semiconductors: Materials Science and Devices
    • Tsu, R.1    Ioriatti, L.2    Harvey, J.3    Shen, H.4    Lux, R.5
  • 37
    • 33646600818 scopus 로고    scopus 로고
    • note
    • In the STM experiment, the STM tips are retracted from the nanocrystal far enough to make most of the bias voltage drop across a tip-nanocrystal junction (J1) (Ref. 27). Therefore we approximate the voltage drop across J1 with the total bias voltage, that is the upper limit of the voltage drop across J1.
  • 38
    • 33646612975 scopus 로고    scopus 로고
    • note
    • In the PLE experiment, its size measurement with transmission electron microscopy (TEM) may underestimate a nanocrystal radius by approximately 2.5 Å, because TEM is insensitive to a nonperiodic layer near the nanocrystal surface (Ref. 26). In the STM experiment, STM topographic images may overestimate a nanocrystal size due to the tip-nanocrystal convolution effect (Ref. 27).
  • 40
    • 33646604723 scopus 로고    scopus 로고
    • Katz, et al. (Ref. 39)
    • Katz, et al. (Ref. 39) estimate that the ratio of the voltage drop across J1 to that across J2 is approximately 10 (see the inset of Fig. 1 for the definitions of J1 and J2). This estimation is based on theoretical tunneling simulations combined with pseudopotential calculations (Ref. 18) for single-particle levels, but not based on experimental measurements of, for instance, the capacitances and resistances of J1 and J2. Therefore approximating the voltage drop across J1 with the total bias voltage has a few tens of percent of uncertainties.
  • 42
  • 44
    • 33646606706 scopus 로고    scopus 로고
    • Http://www.caam.rice.edu/software/ARPACK/. Use of this software does not constitute an endorsement or certification by NIST.
  • 45
    • 33646618771 scopus 로고    scopus 로고
    • Http://www.physics.ohio-state.edu/ohmms/. Use of this software does not constitute an endorsement or certification by NIST.
  • 46
    • 33646604534 scopus 로고    scopus 로고
    • note
    • Use of this product does not constitute an endorsement or certification by NIST.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.