Enhanced strain of InAs quantum dots by an InGaAs ternary layer in a GaAs matrix

Journal of Applied Physics

Volumn 99, Issue 2, 2006, Pages

  Shin, Hyunho ^a   Kim, Jong Bong ^b   Yoo, Yo Han ^b   Lee, Woong ^c   Yoon, Euijoon ^d   Yu, Young Moon ^e  

^a Gangneung Wonju National University   (South Korea)

^b Agency for Defence Development   (South Korea)

^c Yonsei University   (South Korea)

^d Seoul National University   (South Korea)

^e Korea Optics Technology Institute   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-GAP ENERGY; GAAS MATRICES; REDSHIFT; STRAIN RELIEF;

EMBEDDED SYSTEMS; ENERGY GAP; NUMERICAL ANALYSIS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRAIN;

SEMICONDUCTOR QUANTUM DOTS;

EID: 31644449157     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2137880     Document Type: Article

References (20)

1. E. P. O'Reilly, Semicond. Sci. Technol. 4, 121 (1989).
2. M. Califano and P. Harrison, J. Appl. Phys. 91, 389 (2002).
3. C. Pryor, Phys. Rev. B 57, 7190 (1998).
4. U. Banin, Y. W. Cao, D. Katz, and O. Millo, Nature (London) 400, 542 (1999).
5. M. V. Maximov, B. V. Volovik, D. S. Sizov, Y. M. Shernyakov, I. N. Kaiander, A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, and V. M. Ustinov, Phys. Rev. B 62, 16671 (2000).
6. K. Nishi, H. Saito, S. Sugou, and J.-S. Lee, Appl. Phys. Lett. 74, 1111 (1999).
7. J. Tatebayashi, M. Nishioka, and Y. Arakawa, Appl. Phys. Lett. 78, 3469 (2001).
8. X. D. Wang, Z. C. Niu, S. L. Feng, and Z. H. Miao, J. Cryst. Growth 220, 16 (2000).
9. Z. Niu, X. Wang, Z. Miao, and S. Feng, J. Cryst. Growth 227-228, 1062 (2000).
10. L. Chen, V. G. Stoleru, and E. Towe, IEEE J. Sel. Top. Quantum Electron. 8, 1045 (2002).
11. G. T. Liu, A. Stintz, H. Li, T. C. Newell, A. L. Gray, P. M. Varangis, K. J. Malloy, and L. F. Lester, IEEE J. Quantum Electron. 36, 1272 (2000).
12. G. Park, O. B. Shchekin, D. L. Huffaker, and D. G. Deppe, IEEE Photonics Technol. Lett. 13, 230 (2000).
13. V. M. Ustinov, N. A. Maleev, A. E. Zhukov, A. R. Kovsh, A. Y. Egorov, A. V. Lunev, B. V. Volovik, I. L. Krestnikov, Y. G. Musikhim, and N. A. Bert, Appl. Phys. Lett. 74, 2815 (1999).
14. H. Shin, K. S. Hong, W. Lee, and Y.-H. Yoo, Surf. Sci. 562, 73 (2004).
15. Y.-H. Yoo, W. Lee, and H. Shin, J. Appl. Phys. 96, 1644 (2004).
16. M. Tadic, F. M. Peeters, K. L. Janssens, M. Korkusinski, and P. Hawrylak, J. Appl. Phys. 92, 5819 (2002).
17. D. A. Faux, G. Jones, and E. P. O'Reilly, Modell. Simul. Mater. Sci. Eng. 2, 9 (1994).
18. H. Shin, W. Lee, and Y.-H. Yoo, J. Phys.: Condens. Matter 15, 3689 (2003).
19. T. Kakitsuka, T. Saito, T. Nakaoka, Y. Arakawa, H. Ebe, M. Sugawara, and Y. Yoshikuni, Phys. Status Solidi C 0, 1157 (2003).
20. O. Madelung, Numerical Data and Functional Relationships in Science and Technology, Group III (Springer, New York, 1982), Vol. 17a.