-
1
-
-
0342723158
-
Single and multiband modeling of quantum electron transport through layered semiconductor devices
-
R. Lake et al., “Single and multiband modeling of quantum electron transport through layered semiconductor devices, ” J. Appl. Phys., 81(12), 7845 (1997).
-
(1997)
J. Appl. Phys.
, vol.81
, Issue.12
, pp. 7845
-
-
Lake, R.1
-
2
-
-
85005976800
-
NEMO: General release of a new comprehensive quantum device simulator
-
D. Blanks, et al., “NEMO: General release of a new comprehensive quantum device simulator, ” Comp. Semic., 156, 639 (1997/98).
-
(1997)
Comp. Semic.
, vol.156
, pp. 639
-
-
Blanks, D.1
-
3
-
-
85071143790
-
Quantitative simulation of strained InPbased resonant tunneling diodes
-
G. Klimeck, et al., “Quantitative simulation of strained InPbased resonant tunneling diodes, ” IEEE DRC, 92 (1997).
-
(1997)
IEEE DRC
, vol.92
-
-
Klimeck, G.1
-
4
-
-
0004259460
-
Advanced Semiconductor Fundamentals
-
edited by R.F. Pierret and G.W. Neudeck
-
R.F. Pierret, “Advanced Semiconductor Fundamentals, ” Modular Series on Solid State Devices, edited by R.F. Pierret and G.W. Neudeck (1989), Vol. VI.
-
(1989)
Modular Series on Solid State Devices
, vol.6
-
-
Pierret, R.F.1
-
5
-
-
0038080893
-
Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode
-
E.S. Daniel et al., “Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode, ” IEEE Trans. on Electr. Dev., 47(5), 1052 (2000).
-
(2000)
IEEE Trans. on Electr. Dev.
, vol.47
, Issue.5
, pp. 1052
-
-
Daniel, E.S.1
-
6
-
-
0001678951
-
Quantum device simulation with a generalized tunneling formula
-
G. Klimeck et al., “Quantum device simulation with a generalized tunneling formula, ” Appl. Phys. Lett., 67(17), 2539 (1995).
-
(1995)
Appl. Phys. Lett.
, vol.67
, Issue.17
, pp. 2539
-
-
Klimeck, G.1
-
7
-
-
0033354562
-
Genetically engineered nanostructure devices
-
G. Klimeck et al., “Genetically engineered nanostructure devices, ” Proc. Mat. Res. Soc., 551, 149 (1998).
-
(1998)
Proc. Mat. Res. Soc.
, vol.551
, pp. 149
-
-
Klimeck, G.1
-
8
-
-
77949969775
-
Parallelization of the nanoelectronic modeling tool (NEMO 1-D) on a beowulf cluster
-
G. Klimeck, “Parallelization of the nanoelectronic modeling tool (NEMO 1-D) on a beowulf cluster, ” J. of Computational Electr., 1(1/2), 75 (2002).
-
(2002)
J. of Computational Electr.
, vol.1
, Issue.1-2
, pp. 75
-
-
Klimeck, G.1
-
9
-
-
0030151465
-
Physicsbased RTD current-voltage equation
-
J.N. Schulman, H.J.D.L. Santos, and D.H. Chow, “Physicsbased RTD current-voltage equation, ” Electr. Dev. Lett., 17, 220 (1996).
-
(1996)
Electr. Dev. Lett.
, vol.17
, pp. 220
-
-
Schulman, J.N.1
Santos, H.J.D.L.2
Chow, D.H.3
-
10
-
-
0001047262
-
A monolithic 4-bit 2 GPPS resonant tunneling analog-to-digital converter
-
T.P.E. Broekaert, et al., “A monolithic 4-bit 2 GPPS resonant tunneling analog-to-digital converter, ” IEEE J. Solid State Circuits, 33(9), 1342 (1998).
-
(1998)
IEEE J. Solid State Circuits
, vol.33
, Issue.9
, pp. 1342
-
-
Broekaert, T.P.E.1
-
11
-
-
0037560888
-
A physics based model for the RTD quantum capacitance
-
to appear
-
R. Lake and J. Yang, “A physics based model for the RTD quantum capacitance, ” IEEE Trans. on Electr. Dev., (2003) to appear.
-
(2003)
IEEE Trans. on Electr. Dev.
-
-
Lake, R.1
Yang, J.2
-
12
-
-
3743054730
-
Quantitative simulation of a resonant tunneling diode
-
R. Bowen,et al., “Quantitative simulation of a resonant tunneling diode, ” J. Appl. Phys., 81(7), 3207 (1997).
-
(1997)
J. Appl. Phys.
, vol.81
, Issue.7
, pp. 3207
-
-
Bowen, R.1
-
13
-
-
0000145174
-
Role of interface roughness scattering in self-consistent resonant tunneling diode simulation
-
G. Klimeck, R. Lake, and D.K Blanks, “Role of interface roughness scattering in self-consistent resonant tunneling diode simulation, ” Phys. Rev. B, 58, 7279 (1998).
-
(1998)
Phys. Rev. B
, vol.58
, pp. 7279
-
-
Klimeck, G.1
Lake, R.2
Blanks, D.K.3
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