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Volumn 275, Issue 3-4, 2005, Pages 415-421

Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots

(11) Lim, J G a Park, Y J a Park, Y M a Song, J D a Choi, W J a Han, I K a Cho, W J a Lee, J I a Kim, T W b Kim, H S c Park, C G c

a Korea Institute of Science and Technology (South Korea)

b Hanyang University (South Korea)

c Pohang University of Science and Technology (POSTECH) (South Korea)

Author keywords

A1. Nanostructures; A3. Atomic layer epitaxy; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; DOPING (ADDITIVES); HIGH RESOLUTION ELECTRON MICROSCOPY; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC LAYER EPITAXY; INTERBAND TRANSITION PROPERTIES; NANOSTRUCTURE; SEMICONDUCTING III-IV MATERIALS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 20044384863 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.12.015 Document Type: Article

Times cited : (6)

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