First 80nm SON (silicon-on-nothing) MOSFETs with perfect morphology and high electrical performance

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 645-648

  Monfray, S ^a   Skotnicki, T ^a   Morand, Y ^a   Descombes, S ^a   Paoli, M ^a   Ribot, P ^a   Talbot, A ^a   Dutartre, D ^a   Leverd, F ^a   Lefriec, Y ^a   Pantel, R ^a   Haond, M ^a   Renaud, D ^a   Nier, M E ^a   Vizioz, C ^a   Louis, D ^a   Buffet, N ^a  

^a STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; ELECTRIC PROPERTIES; MORPHOLOGY; PERFORMANCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; TRANSCONDUCTANCE;

ELECTRICAL VIABILITY; FIELD INVERSION CHARGE; SILICON ON NOTHING;

MOSFET DEVICES;

EID: 0035717576     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. Silicon-on-nothing (SON)-an improved process for advanced CMOS