First internal spacers' introduction in record high ION /IOFFTiN/HfO2 gate multichannel MOSFET satisfying both high-performance and low standby power requirements

IEEE Electron Device Letters

Volumn 30, Issue 2, 2009, Pages 148-151

  Bernard, Emilie ^a,b   Ernst, Thomas ^b   Guillaumot, Bernard ^a   Vulliet, Nathalie ^a   Lim, Tao Chuan ^c   Rozeau, Olivier ^b   Danneville, Francois ^c   Coronel, Philippe ^a   Skotnicki, Thomas ^a   Deleonibus, Simon ^b   Faynot, Olivier ^b  

^a STMICROELECTRONICS   (France)

^b CEA GRENOBLE   (France)

^c INSTITUT D ELECTRONIQUE   (France)

Author keywords

3 D; AVI; Cgg; CV I; High performances; Internal spacers; Low standby Lower; Multichannel CMOSFETs MCFETs)

Indexed keywords

MOSFET DEVICES; PARAMETER EXTRACTION; SEMICONDUCTING SILICON COMPOUNDS;

3-D; AVI; CGG; CV/I; HIGH PERFORMANCES; INTERNAL SPACERS; LOW STANDBY LOWER; MULTICHANNEL CMOSFETS MCFETS);

VEGETATION;

EID: 59649114951     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2009008     Document Type: Article

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