Damage profile and ion distribution of slow heavy ions in compounds

Journal of Applied Physics

Volumn 105, Issue 10, 2009, Pages

  Zhang, Yanwen ^a   Bae, In Tae ^b   Sun, Kai ^c   Wang, Chongmin ^a   Ishimaru, Manabu ^d   Zhu, Zihua ^a   Jiang, Weilin ^a   Weber, William J ^a  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^b BINGHAMTON UNIVERSITY   (United States)

^c UNIVERSITY OF MICHIGAN   (United States)

^d OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ATOMIC DEFECTS; COMPOUND MATERIAL; CONCENTRATION OF; DAMAGE PROFILES; DOPING CONCENTRATION; ELECTRONIC STOPPING CROSS SECTIONS; ELECTRONIC STOPPING POWER; ENERGY REGIONS; FITTING PARAMETERS; ION DISTRIBUTIONS; ION RANGES; ION-INDUCED DAMAGE; ION-SOLID INTERACTIONS; IRRADIATION EFFECT; LATTICE DISORDERS; LOW ENERGIES; MICROSCOPY TECHNIQUE; NUCLEAR APPLICATION; PB IONS; PROJECTILE RANGE; RECIPROCITY PRINCIPLE; SRTIO; STOPPING AND RANGE OF IONS IN MATTERS;

GALLIUM NITRIDE; HEAVY IONS; INDUSTRIAL APPLICATIONS; PLATINUM; SEMICONDUCTING GALLIUM; SILICON CARBIDE;

LEAD COMPOUNDS;

EID: 66549120684     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3118582     Document Type: Article

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