Recrystallization behavior in SiC amorphized with He or Ne irradiation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 241, Issue 1-4, 2005, Pages 559-562

  Aihara, J ^a   Hojo, T ^b   Furuno, S ^c   Ishihara, M ^a   Sawa, K ^a   Yamamoto, H ^a   Hojou, K ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b IBARAKI UNIVERSITY   (Japan)

^c RESEARCH ORGANIZATION FOR INFORMATION SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Amorphization; Annealing; Bubble coalescence; Crystal nucleation; Irradiation; SiC

Indexed keywords

AMORPHIZATION; AMORPHOUS MATERIALS; ANNEALING; BUBBLES (IN FLUIDS); COALESCENCE; CRYSTALLINE MATERIALS; CRYSTALLIZATION; IRRADIATION; NUCLEATION; TRANSMISSION ELECTRON MICROSCOPY;

BUBBLE COALESCENCE; CRYSTAL NUCLEATION; GAS ATOMS;

SILICON CARBIDE;

EID: 28044450383     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.07.068     Document Type: Conference Paper

References (3)

1. J. Aihara, K. Hojou, S. Furuno, M. Ishihara, and K. Hayashi J. Electron. Microsc. 51 2002 93
2. I. Bae, M. Ishimaru, and Y. Hirotsu Mat. Res. Soc. Symp. Proc. 742 2003 67
3. J.F. Ziegler, J.P. Biersack, and U. Littmark The Stopping and Range of Ions in Solids 1985 Pergamon Press New York