Ion implantation-induced damage depth profile determination in SiC by means of RBS/C and bevelling technique

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 251, Issue 1, 2006, Pages 148-156

  Romanek, J ^a,b   Grambole, D ^b   Herrmann, F ^b   Voelskow, M ^b   Posselt, M ^b   Skorupa, W ^b   Zuk, J ^a  

^a MARIA CURIE SK ODOWSKA UNIVERSITY   (Poland)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

6H SiC; Bevelling; Computer simulation; Micro beam; Radiation damage; RBS C

Indexed keywords

BACKSCATTERING; COMPUTER SIMULATION; ION BEAMS; ION IMPLANTATION; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

BEVELLING; DEPTH PROFILES; ENERGY CALIBRATION; MICRO-BEAM;

SILICON CARBIDE;

EID: 33748431398     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.06.005     Document Type: Article

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