Ion implantation of Cs into silicon carbide: Damage production and diffusion behaviour

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 257, Issue 1-2 SPEC. ISS., 2007, Pages 227-230

  Audren, A ^a   Benyagoub, A ^a   Thome L ^b   Garrido, F ^b  

^a UNIVERSITÉ DE CAEN   (France)

^b CENTRE DE CALCUL DE L INSTITUT NATIONAL DE PHYSIQUE NUCLEAIRE ET DE PHYSIQUE DES PARTICULES   (France)

Author keywords

Diffusion of impurities; Ion radiation effects; Radiation damage (amorphization); Recrystallization; Silicon carbide

Indexed keywords

CESIUM; DAMAGE DETECTION; DIFFUSION; FISSION PRODUCTS; NUCLEAR FUELS; RADIATION DAMAGE; SILICON CARBIDE;

DAMAGE PRODUCTION; DEFECT ANNEALING; DIFFUSION BEHAVIOR;

ION IMPLANTATION;

EID: 33947646249     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.01.005     Document Type: Article

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