Electrical properties of V-doped Bi3.15 Nd0.85 Ti3 O12 thin films with different contents

Applied Physics Letters

Volumn 90, Issue 8, 2007, Pages

  Ye, Z ^a   Tang, M H ^a   Zhou, Y C ^a   Zheng, X J ^a   Cheng, C P ^a   Hu, Z S ^a   Hu, H P ^a  

^a XIANGTAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; CRYSTALLIZATION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; HYSTERESIS; LEAKAGE CURRENTS; VANADIUM; X RAY DIFFRACTION;

BISMUTH TITANATES; CAPACITANCE BUTTERFLY LOOPS; CRYSTALLIZED PHASES; HYSTERESIS LOOPS;

THIN FILMS;

EID: 33847217210     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2709895     Document Type: Article

References (21)

1. J. F. Scott and C. A. Paz de Araujo, Science 246, 1400 (1989).
2. B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, L. Lee, and W. Joe, Nature (London) 401, 682 (1999).
3. T. Watanabe, T. Kojima, T. Sakai, H. Funakubo, M. Osada, Y. Noguchi, and M. Miyayama, J. Appl. Phys. 92, 1518 (2002).
4. A. Z. Simoes, M. A. Ramirez, N. A. Perruci, C. S. Riccardi, E. Longo, and J. A. Varela, Appl. Phys. Lett. 86, 112909 (2005).
5. H. Maiwa, N. Iizawa, D. Togawa, T. Hayashi, W. Sakamoto, M. Yamada, and S. Hirano, Appl. Phys. Lett. 82, 1760 (2003).
6. T. Watanabe, H. Funakubo, M. Osada, Y. Noguchi, and M. Miyayama, Appl. Phys. Lett. 80, 100 (2002).
7. J. S. Kim, C. W. Ahn, H. J. Lee, S. Y. Lee, I. W. Kim, J. S. Bae, and J. H. Jeong, Ceram. Int. 30, 1565 (2004).
8. H. Uchida, H. Yoshikawa, I. Okada, H. Matsuda, T. Iijima, T. Watanabe, T. Kojima, and H. Funakubo, Appl. Phys. Lett. 81, 2229 (2002).
9. H. Uchida, I. Okada, H. Matsuda, T. Iijima, T. Watanabe, and H. Funakubo, Integr. Ferroelectr. 52, 41 (2003).
10. H. Sun, J. Zhu, H. Fang, and X. B. Chen, J. Appl. Phys. 100, 074102 (2006).
11. Z. Ye, M. H. Tang, C. P. Cheng, Y. C. Zhou, X. J. Zheng, and Z. S. Hu, Trans. Nonferrous Met. Soc. China 16, 71 (2006).
12. X. S. Gao and J. Wang, J. Appl. Phys. 99, 074103 (2006).
13. Y. C. Chang and D. H. Kuo, Thin Solid Films 515, 1683 (2006).
14. H. M. Chen and J. Y. Lee, Appl. Phys. Lett. 73, 309 (1998).
15. S. T. Zhang, X. J. Zhang, H. W. Cheng, Y. F. Chen, Z. G. Liu, N. B. Ming, X. B. Hu, and J. Y. Wang, Appl. Phys. Lett. 83, 4378 (2003).
16. A. K. Tagantsev, I. Stolichnov, E. L. Colla, and N. Setter, J. Appl. Phys. 90, 1387 (2001).
17. B. H. Park, T. W. Noh, J. Lee, C. Y. Kim, and W. Jo, Appl. Phys. Lett. 70, 1101 (1997).
18. M. Grossmann, O. Lohse, D. Bolten, U. Boettger, T. Schneller, and R. Waser, J. Appl. Phys. 92, 2680 (2002).
19. C. K. Wong and F. G. Shin, Appl. Phys. Lett. 86, 042901 (2005).
20. H. Ishiwara, M. Okuyama, and Y. Arimoto, Top. Appl. Phys. 93, 73 (2004).
21. X. L. Zhong, J. B. Wang, X. J. Zheng, Y. C. Zhou, and G. W. Yang, Appl. Phys. Lett. 85, 5661 (2004).