Electro-optic properties of oxide ferroelectrics grown on GaN/sapphire

Journal of Applied Physics

Volumn 88, Issue 3, 2000, Pages 1701-1703

  Wang, F ^a   Fuflyigin, V ^a   Osinsky, A ^a  

^a NZ Applied Technologies   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037664975     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373880     Document Type: Article

References (13)

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3. G. H. Haertling, J. Acoust. Soc. Am. 82, 797 (1999).
4. Y. Xu, Ferroelectric Materials and Their Applications (Elsevier Science, New York, 1991).
5. H. Jiang et al., Integr. Ferroelectr. (to be published).
6. M. S. Jin, J. H. Wang, V. Ozguz and S. H. Lee, Appl. Opt. 33, 2842 (1994).
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9. V. Fuflyigin, K. K. Li, F. Wang, H. Jiang, S. Liu, J. Zhao, P. Norris, and P. Yip, in High-Temperature Superconductors and Novel Inorganic Materials, edited by G. Van Tendeloo (Kluwer, New York, 1999), pp. 279-284.
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12. The Sawyer-Tower circuit is described in many monographs, see for example F. Jona and G. Shirane, in Ferroelectric Crystals (Pergamon, New York, 1962), pp. 5-7.
13. K. Wasa et al., J. Lightwave Technol. 2, 710 (1984).