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Journal of Applied Physics

Volumn 104, Issue 7, 2008, Pages

Enhanced ferroelectric properties of Hf-doped bismuth titanate thin films on STO (111) substrates

(5) Wang, X P a Zhu, J a Luo, W B a Zhang, Y a Li, Y R a

a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BISMUTH; ELECTRIC PROPERTIES; FERROELECTRIC FILMS; HAFNIUM; OXYGEN; OXYGEN VACANCIES; PHOTODEGRADATION; PHOTOELECTRON SPECTROSCOPY; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; THICK FILMS; THIN FILMS;

BISMUTH TITANATE THIN FILMS; BOTTOM ELECTRODES; COERCIVE FIELDS; COVALENCY; DOPING; ELECTRICAL PROPERTIES; FATIGUE ENDURANCES; FATIGUE PROPERTIES; FERROELECTRIC PROPERTIES; HIGH ACTIVATION ENERGIES; IONIC RADIUSES; OCTAHEDRAL STRUCTURES; PULSED LASERS; REMANENT POLARIZATIONS; SRTIO3 SUBSTRATES; X-RAY DIFFRACTIONS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 54049120221 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2996080 Document Type: Article

Times cited : (7)

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