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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 7 B, 2002, Pages

Transmission electron microscopy study of the microstructure in selective-area-grown GaN and an AlGaN/GaN heterostructure on a 7-degree off-oriented (001) Si substrate

(6) Tanaka, Shigeyasu a Honda, Yoshio a Kameshiro, Norifumi a Iwasaki, Ryuta a Sawaki, Nobuhiko a Tanji, Takayoshi a

a NAGOYA UNIVERSITY (Japan)

Author keywords

AlGaN; CBED; Dislocation; Facet; GaN; Interface; Lattice polarity; MOVPE; Si; TEM

Indexed keywords

CRYSTAL MICROSTRUCTURE; DISLOCATIONS (CRYSTALS); ELECTRON DIFFRACTION; ELECTRON GAS; HETEROJUNCTIONS; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLITHOGRAPHY; POLARIZATION; SEMICONDUCTOR QUANTUM WELLS; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM GALLIUM NITRIDE; EPITAXIAL LATERAL OVERGROWTH; LATTICE POLARITY; SELECTIVE AREA GROWTH;

GALLIUM NITRIDE;

EID: 0037101406 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.l846 Document Type: Letter

Times cited : (11)

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