Al doping in (1-101) GaN films grown on patterned (001)Si substrate

Journal of Applied Physics

Volumn 101, Issue 10, 2007, Pages

  Hikosaka, T ^a   Honda, Y ^a   Yamaguchi, M ^a   Sawaki, N ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; DOPING (ADDITIVES); FILM GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; SILICON; SUBSTRATES;

BAND EDGE EMISSION BAND; CATHODE LUMINESCENCE (CL); DISLOCATION PINNING;

THIN FILMS;

EID: 34249905619     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2734098     Document Type: Article

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