Optical spectra of (1-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1992-1996

  Kim, Eun Hee ^a   Hikosaka, Toshiki ^a   Narita, Tetsuo ^a   Honda, Yoshio ^a   Sawaki, Nobuhiko ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITY; EXCITATION SOURCES; NITROGEN LASERS; 78.45.+H; 78.55.CR; 78.67.DE; 81.15.GH; DISLOCATION DENSITIES; NEAR BAND EDGE EMISSIONS; OPTICAL GAIN SPECTRA;

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GALLIUM NITRIDE; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; SEMICONDUCTING INDIUM COMPOUNDS; GAS LASERS; LASER EXCITATION; LASER RADIATION; OPTICAL GAIN; SILICON; WAVEGUIDES;

SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

EID: 33746353079     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565290     Document Type: Conference Paper

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