GaN growth on (303̄8) 4H-SiC substrate for reduction of internal polarization

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2121-2124

  Kamiyama, S ^a   Honshio, A ^a   Kitano, T ^a   Iwaya, M ^a   Amano, H ^a   Akasaki, I ^a   Kinoshita, H ^b   Shiomi, H ^b  

^a MEIJO UNIVERSITY   (Japan)

^b SiXON Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; LIGHT EMITTING DIODES; POLARIZATION; PRESSURE EFFECTS; REDUCTION; SAPPHIRE; SILICON CARBIDE; X RAY CRYSTALLOGRAPHY;

CRYSTALLOGRAPHIC ORIENTATIONS; GROWTH PRESSURE; SAPPHIRE SUBSTRATES; WAVELENGTHS;

GALLIUM NITRIDE;

EID: 27344449187     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461390     Document Type: Conference Paper

References (3)

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