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Materials Science in Semiconductor Processing

Volumn 4, Issue 6, 2001, Pages 451-457

Materials engineering of advanced device structures by heteroepitaxy of large misfit systems

(1) Ploog, Klaus H a

a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

Author keywords

Magnetic materials; Molecular beam epitaxy; Semiconducting III V materials

Indexed keywords

CRYSTAL LATTICES; ELECTRIC FIELD EFFECTS; FERROMAGNETISM; HETEROJUNCTIONS; LATTICE CONSTANTS; LIGHT EMISSION; MAGNETIC SEMICONDUCTORS; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE;

SPIN ELECTRONICS;

MOLECULAR BEAM EPITAXY;

EID: 0035575227 PISSN: 13698001 EISSN: None Source Type: Journal
DOI: 10.1016/S1369-8001(02)00002-1 Document Type: Conference Paper

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.