Resonant piezoelectric algan/gan MEMS sensors in longitudinal mode operation

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2009, Pages 927-930

  Brueckner, K ^a   Niebelschuetz, F ^a   Tonisch, K ^a   Stephan, R ^a   Cimalla, V ^b   Ambacher, O ^b   Hein, M A ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; ALGAN/GAN; AMBIENT PRESSURES; BACK ELECTRODE; BEAM RESONATORS; ENVIRONMENTAL PARAMETER; FREQUENCY DOMAINS; HETEROSTRUCTURE; HIGHER ORDER; LONGITUDINAL ACOUSTIC; LONGITUDINAL MODES; MATERIAL PARAMETER; MEMS SENSORS; RESONANT FREQUENCIES; RESONANT RESPONSE; SEMICONDUCTOR FABRICATION PROCESS; SILICON SUBSTRATES; VIBRATION MODES;

ELECTRON GAS; FREQUENCY DOMAIN ANALYSIS; GALLIUM NITRIDE; MEMS; MICROELECTROMECHANICAL DEVICES; NATURAL FREQUENCIES; PIEZOELECTRIC TRANSDUCERS; PIEZOELECTRICITY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

PHASE INTERFACES;

EID: 65949095032     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MEMSYS.2009.4805536     Document Type: Conference Paper

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