Conductive atomic force microscopy studies on the transformation of GeSi quantum dots to quantum rings

Nanotechnology

Volumn 20, Issue 13, 2009, Pages

  Zhang, S L ^a   Xue, F ^a,b   Wu, R ^a   Cui, J ^a   Jiang, Z M ^a   Yang, X J ^a  

^a FUDAN UNIVERSITY   (China)

^b BAOSHAN IRON AND STEEL CO LTD   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPPING LAYERS; CHEMICAL ETCHINGS; COMPOSITION DISTRIBUTIONS; CONDUCTANCE DISTRIBUTIONS; CONDUCTIVE ATOMIC FORCE MICROSCOPIES; CURRENT DISTRIBUTIONS; QUANTUM DOTS; QUANTUM RINGS; SCANNING AUGER MICROSCOPIES; SI CAPPING; SI CAPPING LAYERS;

ATOMIC FORCE MICROSCOPY; ATOMS; ELECTRIC CURRENT DISTRIBUTION MEASUREMENT; NANORINGS; SELF ASSEMBLY; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON;

SEMICONDUCTOR QUANTUM DOTS;

GERMANIUM; QUANTUM DOT; SILICON;

ARTICLE; ATOMIC FORCE MICROSCOPY; CONDUCTANCE; ELECTRIC POTENTIAL; PARTICLE SIZE; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY; TOPOGRAPHY;

EID: 65549167801     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/13/135703     Document Type: Article

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