|
Volumn 15, Issue 7, 2004, Pages 848-850
|
Formation of semiconductor quantum rings using GaAs/AlAs partially capped layers
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ANNEALING;
ATOMIC FORCE MICROSCOPY;
METALLORGANIC VAPOR PHASE EPITAXY;
MOLECULAR BEAM EPITAXY;
NANOSTRUCTURED MATERIALS;
QUANTUM THEORY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTOR QUANTUM DOTS;
SUBSTRATES;
DEWETTING;
MOLECULAR SPECIES;
QUANTUM RINGS;
SEMICONDUCTING GALLIUM ARSENIDE;
|
EID: 3142661964
PISSN: 09574484
EISSN: None
Source Type: Journal
DOI: 10.1088/0957-4484/15/7/024 Document Type: Article |
Times cited : (20)
|
References (13)
|