Fabrication technology of SiGe hetero-structures and their properties

Surface Science Reports

Volumn 59, Issue 7-8, 2005, Pages 153-207

  Shiraki, Yasuhiro ^a   Sakai, Akira ^b  

^a TOKYO CITY UNIVERSITY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

Chemical vapor deposition; Critical thickness; Dislocation; Graded buffer; Hetero structures; Misfit dislocation; Molecular beam epitaxy; SiGe; Strain; Strain relaxation; Surface roughness; Surface segregation; Threading dislocation; Virtual substrate

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); ENERGY GAP; FIELD EFFECT TRANSISTORS; HETEROJUNCTION BIPOLAR TRANSISTORS; MOLECULAR BEAM EPITAXY; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN; SURFACE ROUGHNESS; VLSI CIRCUITS;

CRITICAL THICKNESS; GRADED BUFFER; MISFIT DISLOCATION; SIGE; STRAIN RELAXATION; SURFACE SEGREGATION; THREADING DISLOCATION; VIRTUAL SUBSTRATE;

HETEROJUNCTIONS;

EID: 27844435137     PISSN: 01675729     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfrep.2005.08.001     Document Type: Review

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