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Volumn 92, Issue 19, 2008, Pages

Conductive atomic force microscopy of InAsGaAs quantum rings

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; SELF ASSEMBLED MONOLAYERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TWO DIMENSIONAL;

EID: 44049099958     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2928220     Document Type: Article
Times cited : (12)

References (27)
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    • To a first approximation we treat the highly doped Si tips as a metallic electrode; see, PRBMDO 0163-1829 10.1103/PhysRevB.71.121404, (R).
    • To a first approximation we treat the highly doped Si tips as a metallic electrode; see S. Pal, M. K. Sanyal, N. S. John, and G. U. Kulkarni, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.71.121404 71, 121404 (R) (2005).
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    • http://www.nd.edu/~gsnider.
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    • JAPIAU 0021-8979 10.1063/1.337788.
    • W. W. Lui and M. Fukuma, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.337788 60, 1555 (1986).
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    • Lui, W.W.1    Fukuma, M.2
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.