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Journal of the Electrochemical Society

Volumn 156, Issue 6, 2009, Pages

Textured Ni(Pt) germanosilicide formation on a condensed Si1-x Gex /Si Substrate

(5) Setiawan, Y a,c,d Balakumar, S d Tan, E J b Pey, K L b Lee, P S a

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

c CHARTERED SEMICONDUCTOR MANUFACTURING LTD (Singapore)

d INSTITUTE OF MICROELECTRONICS (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANOSILICIDE; LATTICE PARAMETERS; MORPHOLOGICAL STABILITIES; NI FILMS; PT ALLOYS; PT ATOMS; SI SUBSTRATES; SIGE LAYERS;

ALLOYING; GERMANIUM; INTERFACIAL ENERGY; NICKEL; PHASE INTERFACES; PLATINUM; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON; SILICON ALLOYS;

PLATINUM ALLOYS;

EID: 65449181554 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3121204 Document Type: Article

Times cited : (6)

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