Co-induced low-temperature silicidation of Ni germanosilicide using NiPt alloy and the effect of ge ratio on thermal stability

IEEE Transactions on Nanotechnology

Volumn 6, Issue 5, 2007, Pages 485-491

  Yun, Jang Gn ^a,b   Oh, Soon Young ^b   Huang, Bin Feng ^b   Kim, Yong Jin ^a,b   Ji, Hee Hwan ^b   Kim, Yong Goo ^b   Park, Sung Hyung ^c   Lee, Heui Seung ^c   Kim, Dae Byung ^c   Kim, Ui Sik ^c   Cha, Han Seob ^c   Hu, Sang Bum ^c   Lee, Jeong Gun ^c   Lee, Hi Deok ^a,b  

^a IEEE

^b Chungnam National University   (South Korea)

^c MagnaChip Semiconductor Ltd   (South Korea)

Author keywords

Co overlayer; Ge fraction (x) and CILOS_NP technology; Ni germanosilicide; NiPt alloy; NiPt Co TiN tri layer; Salicide; SiGe; Thermal stability

Indexed keywords

DEPOSITION; LOW TEMPERATURE OPERATIONS; NICKEL ALLOYS; SILICON COMPOUNDS; THERMODYNAMIC STABILITY;

CO OVERLAYERS; NI GERMANOSILICIDE; SILICIDATION;

NICKEL COMPOUNDS;

EID: 34648854429     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2007.897083     Document Type: Article

References (15)

1. S. Zaima, O. Nakatsuka, A. Sakai, J. Murota, and Y. Yasuda, "Interfacial reaction and electrical properties in Ni/Si and Ni/SiGe(C) contacts," Appl. Surf. Sci., vol. 224, pp. 215-221, Mar. 2003.
2. T. Ghani, M. Armstrong, C. Auth, M. Bost, P. Charvat, G. Glass, T. Hoffmann, K. Johnson, C. Kenyon, J. Klaus, B. McIntyre, K. Mistry, A. Murthy, J. Sandford, M. Silberstein, S. Sivakumar, P. Smith, K. Zawadzki, S. Thompson, and M. Bohr, "A 90 nm high volume manufacturing logic technology featuring novel 45 nm gate length strained silicon CMOS transistors," in IEDM Tech. Dig., 2003, pp. 11.6.1-11.6.3.
3. x (x = 0.2, 0.3) at low temperature by rapid thermal annealing," J. Appl. Phys., vol. 92, pp. 214-217, Jul. 2002.
4. 1-x," Appl. Phys. Lett., vol. 58, pp. 905-907, Mar. 1991.
5. P. S. Lee, K. L. Pey, D. Mangelinck, J. Ding, D. Z. Chi, and L. Chan, "New salicidation technology with Ni(Pt) alloy for MOSFETs," IEEE Electron Devices Lett., vol. 22, pp. 568-570, Dec. 2001.
6. D. Mangelinck, J. Y. Dai, J. S. Pan, and S. K. Lahiri, "Enhancement of thermal stability of NiSi films on (100)Si and (111)Si by Pt addition," Appl. Phys. Lett., vol. 75, pp. 1736-1738, Sep. 1999.
7. B. Y. Tsui, J. Y. Tsai, T. S. Wu, and M. C. Chen, "Effect of fluorine incorporation on the thermal stability of PtSi/Si structure," IEEE Trans. Electron Devices, vol. 40, pp. 54-63, Jan. 1993.
8. 2 films on. (111)Si," J. Appl. Phys., vol. 84, pp. 2583-2590, Sep. 1998.
9. J. S. Maa, D. J. Tweet, Y. Ono, L. Stecker, and S. T. Hsu, "Stability improvement of nickel silicide with Co interlayer on Si, Polysilicon and SiGe," in Mat. Res. Soc Symp. Proc. Apr. 2001, vol. 670, K6.9.
10. A. Lauwers, M. Potter, O. Chamirian, R. Lindsay, C. Demeurisse, C. Vrancken, and K. Maex, "Silicides for the 100-nm node and beyond: Co-silicide, Co(Ni)-silicide and Ni-silicide," Microelectron. Eng., vol. 64, pp. 131-142, Oct. 2002.
11. 2 formation," in Proc 2003 IEEE/SEMI Advanced Manufacturing Conf, 2003, pp. 171-174.
12. x under thermal stress," J. Appl. Phys., vol. 92, pp. 7193-7199, Dec. 2002.
13. B. F. Huang, S. Y. Oh, J. G. Yun, Y. J. Kim, H. H. Ji, Y. G. Kim, H. S. Cha, S. B. Heo, J. G. Lee, Y. J. Cho, Y. C. Kim., and H. D. Lee, "Study of abnormal oxidation of Ni-germanosilicide by high temperature post-silicidation annealing," in Proc 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD), pp. 81-84.
14. J. G. Yun, S. Y. Oh, H. H. Ji, B. F. Huang, Y. H. Park, S. H. Park, U. S. Kim, S. B. Hu, J. G. Lee, D. B. Kim, and H. D. Lee, "Optimal Ni/Co thickness extraction and two step rapid thermal process of the nickel-silicide for nano-scale complementary metal oxide semiconductor application," in Proc 2004 International Workshop Junction Technology (IWJT), 2004, pp. 127-130.
15. J. G. Yun, S. Y. Oh, B. F. Huang, H. H. Ji, Y. G. Kim, S. H. Park, H. S. Lee, D. B. Kim, U. S. Kim., H. S. Cha, S. B. Hu, J. G. Lee, S. K. Baek, H. S. Hwang, and H. D. Lee, "Highly thermal robust nickel silicide for nano-scale MOSFETs utilizing a novel hydrogen plasma immersion ion implantation and Ni/Co/TiN tri-layer," IEEE Electron Device Lett., vol. 26, pp. 90-92, Feb. 2005.