SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 76, Issue 1-4, 2004, Pages 285-289

Formation of ternary Ni-silicide on relaxed and strained SiGe layers

(6) Zhao, Q T a Buca, D a Lenk, St a Loo, R b Caymax, M b Mantl, S a

a FORSCHUNGSZENTRUM JÜLICH (Germany)

b IMEC (Belgium)

Author keywords

Germanosilicide; Si1 x Gex; Strain; Strain relaxation

Indexed keywords

ANNEALING; HOLE MOBILITY; MOS DEVICES; MOSFET DEVICES; NICKEL COMPOUNDS; RAPID THERMAL ANNEALING; STRAIN; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

GERMANOSILICIDES; SHEET RESISTANCE; SILICIDE LAYERS; STRAIN-RELAXATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 4544379444 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2004.07.030 Document Type: Conference Paper

Times cited : (21)

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