The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °C

Thin Solid Films

Volumn 462-463, Issue SPEC. ISS., 2004, Pages 151-155

  Jin, L J ^a   Pey, K L ^a,b,c   Choi, W K ^a,c   Fitzgerald, E A ^a,d   Antoniadis, D A ^a,d   Pitera, A J ^d   Lee, M L ^d   Chi, D Z ^e   Tung, C H ^f  

^a SINGAPORE MIT ALLIANCE   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^e INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^f INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

In situ annealing; Ni germanide; Ni germanosilicide; Ni silicide

Indexed keywords

IN-SITU ANNEALING; NI GERMANIDE; NI GERMANOSILICIDE; NI SILICIDE;

CMOS INTEGRATED CIRCUITS; MOSFET DEVICES; RAPID THERMAL ANNEALING; REACTION KINETICS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

NICKEL;

EID: 4344611754     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.05.047     Document Type: Article

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