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Volumn 102, Issue , 1996, Pages 221-229

P-channel SiGe heterostructures for field effect applications

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CYCLOTRON RESONANCE; ELECTRONIC PROPERTIES; HALL EFFECT; INTERFACES (MATERIALS); MAGNETORESISTANCE; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SURFACE ROUGHNESS; VOLTAGE MEASUREMENT;

EID: 0030564815     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00053-0     Document Type: Article
Times cited : (13)

References (37)
  • 7
    • 25344458152 scopus 로고
    • A. Gold, Phys. Rev. B 38 (1988) 798; A. Gold and V.T. Dolgopolov, Phys. Rev. B 33 (1986) 1076.
    • (1988) Phys. Rev. B , vol.38 , pp. 798
    • Gold, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.