Low-resistance nonalloyed ohmic contacts on undoped ZnO films grown by pulsed-laser deposition

Journal of Physics D: Applied Physics

Volumn 42, Issue 9, 2009, Pages

  Tsai, Chia Lung ^a   Lin, Yow Jon ^a   Chin, Yi Min ^a   Liu, W R ^b   Hsieh, W F ^b   Hsu, C H ^b,c   Chu, Jian An ^a  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CONTACT RESISTIVITIES; CURRENT TRANSPORT MECHANISMS; DEPLETION REGIONS; EXCESS CURRENTS; FERMI-LEVEL UNPINNING; LOW RESISTANCES; NONALLOYED OHMIC CONTACTS; PULSED-LASER DEPOSITIONS; TEMPERATURE DEPENDENCES; ZNO; ZNO FILMS;

ELECTRIC CONTACTORS; FIELD EMISSION; METALLIC FILMS; OHMIC CONTACTS; PULSED LASER DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS;

ZINC OXIDE;

EID: 65449129691     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/9/095108     Document Type: Article

References (47)

1. Chang C Y, Tsao F C, Pan C J, Chi G C, Wang H T, Chen J J, Ren F, Norton D P and Pearton S J 2006 Appl. Phys. Lett. 88 173503
2. Jeong M C, Oh B Y, Ham M H and Myoung J M 2006 Appl. Phys. Lett. 88 202105
3. Park S H K, Lee J I, Hwang C S and Chu H Y 2005 Japan. J. Appl. Phys. 44 L242
4. Alivov Y I, Nostrand J E V, Look D C, Chukichev M V and Ataev B M 2003 Appl. Phys. Lett. 83 2943
5. Yuen C, Yu S F, Lau S P, Rusli and Chen T P 2005 Appl. Phys. Lett. 86 241111
6. Tsukazaki A, Kubota M, Ohtomo A, Onuma T, Ohtani K, Ohno H, Chichibu S F and Kawasaki M 2005 Japan. J. Appl. Phys. 44 L643
7. Yang T L, Zhang D H, Ma J, Ma H L and Chen Y 1998 Thin Solid Films 326 60
8. Ott A W and Chang R P H 1999 Mater. Chem. Phys. 58 132
9. Iliadis A A, Vispute R D, Venkatesan T and Jones K A 2002 Thin Solid Films 420-421 478
10. Yang H S, Norton D P, Pearton S J and Ren F 2005 Appl. Phys. Lett. 87 212106
11. Liu W R, Hsieh W F, Hsu C H, Liang K S and Chien F S S 2006 J. Cryst. Growth 297 294
12. Sun X W and Kwok H S 1999 J. Appl. Phys. 86 408
13. Chen J J, Anderson T J, Jang S, Ren F, Li Y J, Kim H S, Gila B P, Norton D P and Pearton S J 2006 J. Electrochem. Soc. 153 G462
14. Brandt M et al 2008 J. Appl. Phys. 104 013708
15. Ip K, Baik Y W H, Norton D P, Pearton S J and Ren F 2004 Appl. Phys. Lett. 84 544
16. Yang H S, Li Y, Norton D P, Ip K, Pearton S J, Jang S and Ren F 2005 Appl. Phys. Lett. 86 192103
17. Kang H S, Kang J S, Kim J W and Lee S Y 2004 J. Appl. Phys. 95 1246
18. Monteiro T, Neves A J, Carmo M C, Soares M J, Peres M, Wang J, Alves E, Rita E and Wahl U 2005 J. Appl. Phys. 98 013502
19. Özgür Ü, Alivov Y I, Liu C, Teke A, Reshchikov M A, Dòan S, Avrutin V, Cho S J and Morkoç H 2005 J. Appl. Phys. 98 041301
20. Lin Y J, Tsai C L, Lu Y M and Liu C J 2006 J. Appl. Phys. 99 093501
21. Kim H K, Kim S W, Yang B, Kim S H, Lee K H, Ji S H and Yoon Y S 2006 Japan. J. Appl. Phys. 45 1560
22. Akane T, Sugioka K and Midorikawa K 2000 J. Vac. Sci. Technol. B 18 1406
23. Kim S Y, Jang H W, Kim J K, Jeon C M, Park W I, Yi G C and Lee J L 2002 J. Electron. Mater. 31 868
24. Schroder D K 2006 Semiconductor Material and Device Characterization 3rd edn (New York: Wiley)
25. Morkoç H 1999 Nitride Semiconductors and Devices (Berlin: Springer)
26. Lin Y J, Yang F M, Huang C Y, Chou W Y, Chang J and Lien Y C 2007 Appl. Phys. Lett. 91 092127
27. Kim S Y, Baik J M, Yu H K and Lee J L 2005 J. Appl. Phys. 98 093707
28. Hong S K, Hanada T, Makino H, Chen Y, Ko H J, Tanaka A, Sasaki H and Sato S 2001 Appl. Phys. Lett. 78 3349
29. Ruckh M, D. Schmid D and Schock H W 1994 J. Appl. Phys. 76 5945
30. Hong S K, Hanada T, Makino H, Ko H J, Chen Y, Yao T, Tanaka A, Sasaki H, Sato S, Imai D, Araki K and Shinohara M 2001 J. Vac. Sci. Technol. B 19 1429
31. Waldrop J R and Grant R W 1988 Appl. Phys. Lett. 52 1794
32. Pearton S J, Norton D P, Ip K, Heo Y W and Steiner T 2005 Prog. Mater. Sci. 50 293
33. Lee C T, Lin Y J and Lee T H 2003 J. Electron. Mater. 32 341
34. von Wenckstern H, Kaidashev E M, Lorenz M, Hochmuth H, Biehne G, Lenzner J, Gottschalch V, Pickenhain R and Grundmann M 2004 Appl. Phys. Lett. 84 79
35. Coppa B J, Fulton C C, Hartlieb P J, Davis R F, Rodriguez B J, Shields B J and Nemanich R J 2004 J. Appl. Phys. 95 5856
36. Coppa B J, Fulton C C, Kiesel S M, Davis R F, Pandarinath C, Burnette J E, Nemanich R J and Smith D J 2005 J. Appl. Phys. 97 103517
37. Gu Q L, Cheung C K, Ling C C, Ng A M C, Djurišiæ A B, Lu L W, Chen X D, Fung S, Beling C D and Ong H C 2008 J. Appl. Phys. 103 093706
38. Look D C, Mosbacker H L, Strzhemechny Y M and Brillson L J 2005 Superlatt. Microstruct. 38 406
39. Mönch W 1999 J. Vac. Sci. Technol. B 17 1867
40. Li Y J, Kaspar T C, Droubay T C, Zhu Z, Shutthanandan V, Nachimuthu P and Chambers S A 2008 Appl. Phys. Lett. 92 152105
41. Van de Walle C G 2000 Phys. Rev. Lett. 85 1012
42. Chen Y, Bagnall D M, Koh H J, Park K T, Hiraga K J, Zhu Z Q and Yao T 1998 J. Appl. Phys. 84 3912
43. Nie L C, Yang J Y, Piao Y, Li H, Sun Y, Xue Q M, Xiong C M, Dou R F and Tu Q Y 2008 Appl. Phys. Lett. 93 173104
44. Yang C, Li X M, Gu Y F, Yu W D, Gao X D and Zhang Y W 2008 Appl. Phys. Lett. 93 112114
45. Zhao S, Ji Z, Wang C and Du J 2007 Mater. Lett. 61 897
46. Ji Z, Zhao S, Wang C and Liu K 2005 Mater. Sci. Eng. B 117 63
47. Zhou X H, Hu Q H and Fu Y 2008 J. Appl. Phys. 104 063703