High electron mobility of phosphorous-doped homoepitaxial ZnO thin films grown by pulsed-laser deposition

Journal of Applied Physics

Volumn 104, Issue 1, 2008, Pages

  Brandt, Matthias ^a   Von Wenckstern, Holger ^a   Schmidt, Heidemarie ^a,b   Rahm, Andreas ^a,c   Biehne, Gisela ^a   Benndorf, Gabriele ^a   Hochmuth, Holger ^a   Lorenz, Michael ^a   Meinecke, Christoph ^a   Butz, Tilman ^a   Grundmann, Marius ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c Solarion AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ATOMIC STRUCTURE; ELECTRIC CURRENTS; ELECTRON MOBILITY; EPITAXIAL GROWTH; GALVANOMAGNETIC EFFECTS; HALL EFFECT; LASERS; MAGNETIC FIELD EFFECTS; METALLIC FILMS; MICROSCOPIC EXAMINATION; NONMETALS; OPTICAL FILMS; OXYGEN; PARTIAL PRESSURE; PHOSPHORUS; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING PROBE MICROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES; THICK FILMS; THIN FILMS; TRANSPORT PROPERTIES; TWO DIMENSIONAL; VAPOR DEPOSITION; ZINC ALLOYS; ZINC OXIDE;

ATOMIC FORCE MICROSCOPY (AFM); GROWTH CONDITIONS; HALL EFFECT MEASUREMENTS; HIGH RESOLUTION X RAY DIFFRACTION (HR XRD); HIGH-ELECTRON-MOBILITY (HEM); HOMOEPITAXIAL; MINIMUM YIELD; OXYGEN PARTIAL PRESSURE (OPP); PULSED LASER DEPOSITION (PLD); RBS/CHANNELING; RUTHERFORD BACKSCATTERING (RBS); TWO DIMENSIONAL GROWTH; ZNO SINGLE CRYSTALS; ZNO THIN FILMS;

IMAGING TECHNIQUES;

EID: 47749112848     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2953066     Document Type: Article

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