Annealing studies on InN thin films grown by modified activated reactive evaporation

Journal of Crystal Growth

Volumn 311, Issue 8, 2009, Pages 2542-2548

  Biju, Kuyyadi P ^a   Jain, Mahaveer K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

A1. Annealing; A3. Modified activated reactive evaporation; B2. InN

Indexed keywords

A1. ANNEALING; A3. MODIFIED ACTIVATED REACTIVE EVAPORATION; ANNEALED FILMS; ANNEALING TEMPERATURES; B2. INN; BAND GAPS; ELECTRICAL AND OPTICAL PROPERTIES; EXCESS NITROGENS; IN VACUUMS; INDIUM NITRIDES; INDIUM OXIDES; INN THIN FILMS; MOSS-BURSTEIN SHIFTS; OPTIMAL ANNEALING; OXYNITRIDE; PHOTOLUMINESCENCE INTENSITIES;

BIOACTIVITY; CARRIER CONCENTRATION; ENERGY GAP; EVAPORATION; INDIUM; INDIUM COMPOUNDS; NITRIDES; OPTICAL PROPERTIES; OXIDE FILMS; SEMICONDUCTING FILMS; THIN FILMS; VACUUM; VACUUM TECHNOLOGY; VAPORS;

ANNEALING;

EID: 65249102823     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.105     Document Type: Article

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