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Journal of Crystal Growth

Volumn 281, Issue 2-4, 2005, Pages 310-317

Study on the thermal stability of InN by in-situ laser reflectance system

(7) Huang, Y a Wang, H a Sun, Q a Chen, J a Wang, J F a Wang, Y T a Yang, H a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

A1. In situ reflectometry; A1. Thermal stability; A3. Metalorganic chemical vapor deposition; B1. InN

Indexed keywords

AMMONIA; ANNEALING; DECOMPOSITION; ELECTRIC PROPERTIES; FREE RADICALS; LASER APPLICATIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; OPTOELECTRONIC DEVICES; REFLECTION; SEMICONDUCTOR MATERIALS; THERMODYNAMIC STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY;

HALL MEASUREMENTS; IN SITU REFLECTOMETRY; INN; RAMPING RATE;

INDIUM COMPOUNDS;

EID: 22144467386 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.04.055 Document Type: Article

Times cited : (14)

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