Characterization of oxide precipitates in epitaxial InN by transmission electron microscopy

Applied Physics Letters

Volumn 87, Issue 9, 2005, Pages

  Xu, X ^b   Specht, P ^b   Armitage, R ^b   Ho, J C ^b   Weber, E R ^b   Kisielowski, C ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHIC ORIENTATION; OXYGEN CONTAMINATION; PRECIPITATES;

CRYSTAL ORIENTATION; EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; PRECIPITATION (CHEMICAL); SEMICONDUCTING INDIUM COMPOUNDS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING FILMS;

EID: 24644463911     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2035330     Document Type: Article

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