Thermal annealing of InN films grown by metal-organic chemical vapor deposition

Thin Solid Films

Volumn 488, Issue 1-2, 2005, Pages 111-115

  Bi, Z X ^a   Zhang, R ^a   Xie, Z L ^a   Xiu, X Q ^a   Ye, Y D ^a   Liu, B ^a   Gu, S L ^a   Shen, B ^a   Shi, Y ^a   Zheng, Y D ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Indium nitride; Scanning electron microscope; X ray diffraction; X ray photoelectron spectroscopy

Indexed keywords

CARRIER MOBILITY; CRYSTAL STRUCTURE; FIELD EFFECT TRANSISTORS; FILM GROWTH; INDIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; SOLAR CELLS; VAPORIZATION; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

BUFFER LAYERS; HALL MOBILITY; INDIUM NITRIDE; SCANNING ELECTRON MICROSCOPES; SURFACE SEGREGATION;

THIN FILMS;

EID: 23144445053     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.04.071     Document Type: Article

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