Growth of InN on Ge(1 1 1) by molecular beam epitaxy using a GaN buffer

Journal of Crystal Growth

Volumn 310, Issue 6, 2008, Pages 1132-1136

  Lieten, R R ^a,b   Degroote, S ^a   Leys, M ^a   Derluyn, J ^a   Kuijk, M ^b   Borghs, G ^a  

^a IMEC   (Belgium)

^b VRIJE UNIVERSITEIT BRUSSEL   (Belgium)

Author keywords

A1. Single crystal growth; A3. Molecular beam epitaxy; B1. GaN; B1. Germanium; B1. InN; B1. Nitrides

Indexed keywords

EPITAXIAL GROWTH; GALLIUM NITRIDE; GERMANIUM; MOLECULAR BEAM EPITAXY; OPTICAL BAND GAPS; SINGLE CRYSTALS;

INTERMEDIATE LAYER; VERTICAL CONDUCTING DEVICES;

BUFFER LAYERS;

EID: 39649100847     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.12.046     Document Type: Article

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