Growth of InN thin films by modified activated reactive evaporation

Journal of Physics D: Applied Physics

Volumn 41, Issue 15, 2008, Pages

  Biju, Kuyyadi P ^a   Subrahmanyam, A ^a   Jain, Mahaveer K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; CHLORINE COMPOUNDS; ECOLOGY; EVAPORATION; INDIUM COMPOUNDS; ION BOMBARDMENT; LIGHT EMISSION; LITHOGRAPHY; LUMINESCENCE; METALS; MOISTURE; NITRIDES; NITROGEN; NONMETALS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; THICK FILMS; VAPORS;

ACTIVATED REACTIVE EVAPORATION; BAND GAPS; C -AXIS; GROWTH TECHNIQUES; HIGH GROWTH RATES; INDIUM NITRIDE FILMS; INN THIN FILMS; LOW ENERGY NITROGEN; METAL OXIDES; ORIENTED FILMS; PHOTOLUMINESCENCE (PL); RAMAN SPECTRUM; ROOM TEMPERATURES; SILICON SUBSTRATES; SUBSTRATE HEATING;

SUBSTRATES;

EID: 49749140375     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/15/155409     Document Type: Article

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