Absorption and photoluminescence features caused by defects in InN

Journal of Crystal Growth

Volumn 269, Issue 1, 2004, Pages 77-86

  Alexandrov, Dimiter ^a   Butcher, K Scott A ^b   Wintrebert Fouquet, Marie ^b  

^a LAKEHEAD UNIVERSITY   (Canada)

^b MACQUARIE UNIVERSITY   (Australia)

Author keywords

B1. Nanomaterials; B1. Nitrides

Indexed keywords

BAND STRUCTURE; CRYSTAL DEFECTS; EXCITONS; FILM GROWTH; GALLIUM NITRIDE; INDIUM ALLOYS; LAYERED MANUFACTURING; LIGHT ABSORPTION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SUBSTRATES; SURFACE CHEMISTRY; TRANSMISSION ELECTRON MICROSCOPY;

INN; INTERFACIAL LAYERS; NANOMATERIALS; TERNARY SEMICONDUCTORS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 3343003789     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.05.036     Document Type: Conference Paper

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