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Journal of Applied Physics

Volumn 105, Issue 6, 2009, Pages

Enhanced performance of GaN-based light emitting diode with isoelectronic Al doping layer

(2) Lee, Jae Hoon a Lee, Jung Hee b

a Samsung Electro Mechanics (South Korea)

b Kyungpook National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AL CONCENTRATIONS; AL INCORPORATIONS; AL-DOPING; CRYSTAL QUALITIES; ELECTRICAL AND OPTICAL PROPERTIES; ENHANCED PERFORMANCE; FORWARD CURRENTS; GAN FILMS; GAN LAYERS; LIGHT EMITTING DIODE LEDS; METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; OUTPUT POWER; SAPPHIRE SUBSTRATES; SIDE VIEWS; X-RAY ANALYSIS;

ALUMINUM; CORUNDUM; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); ELECTRON MOBILITY; EPITAXIAL FILMS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT SOURCES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; ORGANIC CHEMICALS; ORGANIC LIGHT EMITTING DIODES (OLED); ORGANOMETALLICS; PHOTODEGRADATION; PHYSICAL OPTICS; SEMICONDUCTING GALLIUM;

GALLIUM ALLOYS;

EID: 63749127647 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3095486 Document Type: Article

Times cited : (14)

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