Isoelectronic As doping effects on the optical characteristics of GaN films grown by metalorganic chemical-vapor deposition

Applied Physics Letters

Volumn 77, Issue 18, 2000, Pages 2819-2821

  Huang, H Y ^a   Lin, W C ^a   Lee, W H ^a   Shu, C K ^a   Liao, K C ^a   Chen, W K ^a   Lee, M C ^a   Chen, W H ^a   Lee, Y Y ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012056412     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1316075     Document Type: Article

References (19)

1. S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, Jpn. J. Appl. Phys., Part 2 34, L797 (1995).
2. M. Harada, Proceedings of the Second International Conference on Nitride Semiconductors, ICNS'97, Oct. 27-31, 1997, Tokushima, Japan, p. 30.
3. C. K. Shu, J. Ou, H. C. Lin, W. K. Chen, and M. C. Lee, Appl. Phys. Lett. 73, 641 (1998).
4. H. Kumano, K.-I. Koshi, S. Tanaka, I. Suemune, X.-Q. Shen, P. Riblet, P. Ramvall, and Y. Aoyagi, Appl. Phys. Lett. 75, 2879 (1999).
5. H. Y. Huang, C. K. Shu, W. C. Lin, C. H. Chuang, M. C. Lee, W. K. Chen, and Y. Y. Lee, Appl. Phys. Lett. 76, 3224 (2000).
6. L. J. Guido, P. Mitev, M. Gherasimova, and B. Gaffey, Appl. Phys. Lett. 72, 2005 (1998).
7. X. Li, S. Kim, E. E. Reuter, S. G. Bishop, and J. J. Celeman, Appl. Phys. Lett. 72, 1990 (1998).
8. J. I. Pankove and J. A. Hutchhy, J. Appl. Phys. 47, 5387 (1976).
9. C. Wetzel, S. Fischer, J. Kruger, E. E. Haller, R. J. Molnar, T. D. Moustakas, E. N. Mckhov, and P. G. Baranov, Appl. Phys. Lett. 68, 2556 (1996).
10. G. D. Chen, M. Smith, J. Y. Lin, and H. X. Jiang, J. Appl. Phys. 79, 2675 (1996).
11. C. I. Harris, B. Monemar, H. Amano, and I. Akasaki, Appl. Phys. Lett. 67, 840 (1995).
12. W. Shan, X. C. Xie, and J. J. Song, Appl. Phys. Lett. 67, 2512 (1995).
13. Y. Narukawa, S. Saijou, Y. Kawakami, and S. Fujita, Appl. Phys. Lett. 74, 558 (1999).
14. R. Klann, O. Brandt, H. T. Grahn, K. Ploog, and A. Trampert, Phys. Rev. B 52, R11615 (1995).
15. J. I. Pankove, Optical Processes in Semiconductors (Dover, New York, 1971), Chaps. 6 and 7.
16. C. G. Van de Walle and J. Neugebauer, Appl. Phys. Lett. 76, 1009 (2000).
17. J. W. Allen, J. Phys. C 4, 1936 (1971).
18. T. Mattila and A. Zunger, Phys. Rev. B 58, 1367 (1998).
19. D. K. Schroder. Semiconductor Material and Device Characterization (Wiley, New York, 1998), Chaps. 5 and 7.