Evidence of a thermally stimulated charge transfer mechanism and interface defect formation in metal-oxide-semiconductor structures with germanium nanocrystals

Journal of Applied Physics

Volumn 105, Issue 6, 2009, Pages

  Beyer, Reinhard ^a   Von Borany, Johannes ^b  

^a Beyer Associates   (Germany)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE MEASUREMENTS; CHARGE-TRANSFER MECHANISMS; DE-TRAPPING; DIRECT TUNNELING; GERMANIUM NANOCRYSTALS; IMPLANTED SAMPLES; INTERFACE DEFECTS; INTERFACE STATE; ION BEAM SYNTHESIS; METAL-OXIDE-SEMICONDUCTOR STRUCTURES; OXIDE TRAP DENSITIES; TEMPERATURE DEPENDENCES; THERMALLY STIMULATED PROCESS; TRAP STATE; TWO-STAGE PROCESS; VALENCE BAND EDGES;

CHARGE TRANSFER; CHARGE TRAPPING; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; EMISSION SPECTROSCOPY; GERMANIUM; HYSTERESIS; ION EXCHANGE; MASS TRANSFER; NANOCLUSTERS; NANOCRYSTALS; SEMICONDUCTING GERMANIUM; VANADIUM COMPOUNDS;

CHARGE CARRIERS;

EID: 63749112927     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3087131     Document Type: Article

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