Electrical characteristics of a metal-insulator-semiconductor memory structure containing Ge nanocrystals

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 26, Issue 1-4, 2005, Pages 386-390

  Heng, C L ^a   Finstad, T G ^a  

^a UNIVERSITY OF OSLO   (Norway)

Author keywords

C V measurement; Ge nanocrystals; Memory effects; Si SiO2 interface states

Indexed keywords

ANNEALING; CAPACITANCE; ELECTRIC FIELD EFFECTS; ELECTRODES; ELECTRON BEAMS; ELECTROSTATICS; EVAPORATION; GERMANIUM COMPOUNDS; HYSTERESIS; INTERFACES (MATERIALS); MOSFET DEVICES; NANOSTRUCTURED MATERIALS; SILICA; TRANSMISSION ELECTRON MICROSCOPY; VOLTAGE CONTROL;

C-V MEASUREMENT; GE NANOCRYSTALS; MEMORY EFFECTS; SI/SIO2 INTERFACE STATES;

MISFET DEVICES;

EID: 13444292188     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2004.08.006     Document Type: Conference Paper

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