Retention characteristics of Ge-nanocrystal nonvolatile MOS memories

2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

Volumn 1, Issue , 2006, Pages 642-643

  Oh, J S ^a   Oh, H T ^a   Lee, Y H ^a   Yang, W C ^a   Cho, H Y ^a   Choi, S H ^b   Park, C J ^c   Kim, C W ^c  

^a Dongguk University   (South Korea)

^b Kyung Hee University   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

Ge; Memory; MOS; Nanocrystal; Nonvolatile; Retention

Indexed keywords

ANNEALING; DATA STORAGE EQUIPMENT; ION BOMBARDMENT; ION IMPLANTATION; IONS; METALS; NANOCRYSTALS; NANOSTRUCTURES; NANOTECHNOLOGY; OPTICAL DESIGN; TECHNOLOGY;

GE; MEMORY; METAL-OXIDE-SEMICONDUCTOR; MOS; NANOCRYSTAL; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY; NONVOLATILE; RETENTION; RETENTION CHARACTERISTICS;

GERMANIUM;

EID: 50249165284     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NMDC.2006.4388943     Document Type: Conference Paper

References (7)

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