Modeling of Ge nanocluster evolution in ion-implanted SiO2 layer

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 147, Issue 1-4, 1999, Pages 286-291

  Borodin, V A ^a,b   Heinig, K H ^a   Schmidt, B ^b  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b KURCHATOV INSTITUTE   (Russian Federation)

Author keywords

Annealing; Germanium; Ion beam synthesis; Modeling; Oxidation; Silicon dioxide; Thin films

Indexed keywords

ANNEALING; MATHEMATICAL MODELS; OXIDATION; SEMICONDUCTING GERMANIUM; SILICA; SYNTHESIS (CHEMICAL);

HIGH TEMPERATURE ANNEALING; ION BEAM SYNTHESIS;

ION IMPLANTATION;

EID: 0032755222     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00562-X     Document Type: Article

References (8)

1. L. Rebohle, J. von Borany, R.A. Yankov, W. Skorupa, I.E. Tyschenko, H. Fröb, K. Leo, Appl. Phys. Lett. 71 (1997) 2809.
2. M.L. Brongersma, A. Polman, K.S. Min, E. Boer, T. Tambo, H.A. Atwater, Appl. Phys. Lett. 72 (1998) 2577.
3. J. von Borany, R. Grötzschel, K.H. Heinig, A. Markwitz, W. Matz, B. Schmidt, W. Skorupa, Appl. Phys. Lett. 71 (1997) 3215.
4. V.A. Borodin, K.-H. Heinig, to be published.
5. V.A. Borodin, Physica A 211 (1994) 279.
6. K.-H. Heinig, B. Schmidt, V.A. Borodin, A. Markwitz, R. Grötzschel, to be published.
7. B.E. Deal, A.S. Grove, J. Appl. Phys. 36 (1965) 3770.
8. R.M. Burger, R.P. Donovan (Eds.), Fundamentals of Silicon Integrated Device Technology, vol. 1, Oxidation, Diffusion and Epitaxy, Prentice-Hall, Englewood Cliffs, NJ, 1967.