Nanocrystal and nanocluster formation and oxidation in annealed Ge-implanted SiO2 films

Surface and Coatings Technology

Volumn 158-159, Issue , 2002, Pages 544-547

  Marstein, E S ^a   Gunnas, A E ^a   Serincan, U ^b   Turan, R ^b   Olsen, A ^a   Finstad, T G ^a  

^a UNIVERSITY OF OSLO   (Norway)

^b MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Germanium; Ion implantation; Nanostructure; Secondary ion mass spectroscopy (SIMS); Silicon oxide; Transmission electron microscopy (TEM)

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; HEAT TREATMENT; OXIDATION; RAMAN SPECTROSCOPY; X RAY SPECTROSCOPY;

OXIDIZING SPECIES;

NANOSTRUCTURED MATERIALS;

SILICON DIOXIDE;

EID: 0036394594     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(02)00303-1     Document Type: Article

References (13)