Influence of thermal annealing on charge storage behaviour of Ge nanoclusters synthesized with low-energy Ge ion implantation

Journal of Physics D: Applied Physics

Volumn 42, Issue 3, 2009, Pages

  Yang, M ^a   Chen, T P ^a   Wong, J I ^a   Liu, Y ^a   Ding, L ^a   Liu, K Y ^a   Zhang, S ^b   Zhang, W L ^b   Gui, D ^c   Ng, C Y ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c Chartered Semiconductor Manufacturing   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON ENERGY LOSS SPECTROSCOPY; EMISSION SPECTROSCOPY; GATES (TRANSISTOR); GERMANIUM; ION BOMBARDMENT; ION IMPLANTATION; MOS DEVICES; NANOCLUSTERS; OXIDATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS;

ANNEALING TEMPERATURES; CHARGE LOSS; CHARGE STORAGES; COMPETING MECHANISMS; ELECTRON TRAPPING; GATE OXIDES; GE ATOMS; LEAKAGE PATHS; LOW ENERGIES; LOW-ENERGY ION IMPLANTATIONS; METAL-OXIDE-SEMICONDUCTOR STRUCTURES; SECONDARY ION MASS SPECTROSCOPIES; SI SUBSTRATES; THERMAL-ANNEALING; X-RAY PHOTOEMISSION SPECTROSCOPIES;

SEMICONDUCTING GERMANIUM;

EID: 63649117653     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/3/035109     Document Type: Article

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