Amorphous Ge quantum dots embedded in SiO2 formed by low energy ion implantation

Journal of Applied Physics

Volumn 103, Issue 12, 2008, Pages

  Zhao, J P ^a,b   Huang, D X ^a,b   Chen, Z Y ^b   Chu, W K ^a,b   Makarenkov, B ^b   Jacobson, A J ^a,b   Bahrim, B ^c   Rabalais, J W ^b,c  

^a UNIVERSITY OF HOUSTON   (United States)

^b University of Houston   (United States)

^c LAMAR UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; ATOMIC SPECTROSCOPY; ELECTRON ENERGY LOSS SPECTROSCOPY; HIGH ENERGY PHYSICS; ION BOMBARDMENT; ION IMPLANTATION; ISOTOPES; MATERIALS SCIENCE; NANOSTRUCTURED MATERIALS; OPTICAL WAVEGUIDES; OXIDE MINERALS; OXYGEN; PHOTOELECTRON SPECTROSCOPY; PHOTOELECTRONS; QUANTUM ELECTRONICS; QUARTZ; SEMICONDUCTOR QUANTUM DOTS; SILICON; SILICON COMPOUNDS; SIZE DISTRIBUTION; SURFACE DIFFUSION; TEMPERATURE; TRANSIENT ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; VACUUM; VACUUM TECHNOLOGY; X RAY PHOTOELECTRON SPECTROSCOPY;

AMERICAN INSTITUTE OF PHYSICS (AIP); BIMODAL SIZE DISTRIBUTIONS; CROSS-SECTIONAL TEM (XTEM); DEPTH PROFILING; ELECTRON MICROSCOPY (TEM AND SEM); GE CONCENTRATIONS; GE QUANTUM DOTS; HIGH ENERGY ION IMPLANTATION; HIGH-ENERGY IMPLANTATION; HIGH-TEMPERATURE ANNEALING; IMPLANTATION TEMPERATURE; INWARD DIFFUSION; KINETIC (POLYM.); MECHANISM OF FORMATION; MICRO RAMAN SCATTERING; NANO DOTS; NANODOTS (ND); PREFERENTIAL SPUTTERING; QUANTUM DOT (CO); ROOM-TEMPERATURE (RT); SPATIAL DISTRIBUTION OF; SPATIAL DISTRIBUTIONS; SURFACE OXYGEN; SYNERGETIC EFFECTS; ULTRAHIGH-VACUUM CONDITIONS; X RAY PHOTOELECTRON SPECTRA (XPS);

GERMANIUM;

EID: 46449134515     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2927254     Document Type: Article

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