Si ion-induced instability in flatband voltage of Si+ -implanted gate oxides

IEEE Transactions on Electron Devices

Volumn 53, Issue 5, 2006, Pages 1280-1282

  Ng, C Y ^a   Chen, T P ^a   Ding, L ^a   Chen, Q ^a   Liu, Y ^a   Zhao, P ^a   Tseng, Ampere A ^b   Fung, S ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b ARIZONA STATE UNIVERSITY   (United States)

^c UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Annealing; Flatband voltage; Low energy ion beam; Silicon nanocrystal (nc Si)

Indexed keywords

ANNEALING; ELECTRIC POTENTIAL; IONS; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON;

FLATBAND VOLTAGE; GATE OXIDES; LOW ENERGY ION BEAM; TRAPPED IONS;

GATES (TRANSISTOR);

EID: 33646021031     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.871841     Document Type: Article

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