Multilayer (Al,Ga)N structures for solar-blind detection

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 10, Issue 4, 2004, Pages 752-758

  Mosca, Mauro ^a   Reverchon, Jean Luc ^a   Grandjean, Nicolas ^b   Duboz, Jean Yves ^b  

^a EPFL   (Switzerland)

^b CRHEA CNRS   (France)

Author keywords

(Al,Ga)N molecular beam epitaxy; (Al,Ga)N multilayer heterostructures; Solar blind detectors

Indexed keywords

CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; LEAKAGE CURRENTS; LIGHTING; MECHANICAL PROPERTIES; MOLECULAR BEAM EPITAXY; PHOTODETECTORS; RADIATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SOLAR ENERGY; VAPOR DEPOSITION;

(AL,GA)N MOLECULAR BEAM EPITAXY; (AL,GA)N MULTILAYER HETEROSTRUCTURES; ABSORBING LAYERS; SOLAR-BLIND DETECTORS;

MULTILAYERS;

EID: 7544232145     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2004.833879     Document Type: Article

References (20)

1. S. Nakamura, T. Mnkai, and M. Senob, "Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes," Appl. Phys. Lett., vol 64, pp. 1687-1689, 1994.
2. S. Nakamura, M. Senoh, S.-L Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, "Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours," Appl. Phys. Lett., vol. 70, pp. 1417-1419, 1997.
3. H. Morkoç, A. Di Carlo. and R. Cingolani, "GaN-based modulation doped FET's and UV detectors," Solid-State Electron., vol. 46, pp. 157-202, 2002.
4. M. Razeghi and A. Rogalski, "Semiconductor ultraviolet detectors," J. Appl. Phys., vol. 79, pp. 7433-7473, 1996.
5. Y. A. Goldberg, "Semiconductor near-ultraviolet photoelectronics," Semiconduct. Sci. Technol., vol. 14, pp. R41-R60, 1999.
6. B. Gil, Group III Nitride Semiconductor Compounds: Physics and Application. Oxford, U.K.: Clarendon, 1998.
7. Z. C. Huang, D. B. Mott, and P. K. Shu, "Improvement of metal-semiconductor-metal GaN ultraviolet detectors," in Dig. 54th Annu. Device Res. Corf. 1996. Santa Barbara, CA, 1996, pp. 188-189.
8. F. Omnès, N. Marenco, B. Beaumont, P. de Merry, E. Monroy, F. Calle, and E. Muñoz, "Metalorganic vapor-phase epitaxy-grown AlGaN materials for visible-bund ultraviolet photodetector applications," J. Appl. Phys., vol. 86, pp. 5286-5292, 1999.
9. T. D. Moustakas, "Epitaxial growth of GaN films produced by ECR-assisted MBE," in Proc. Materials Res. Soc. Symp., vol. 395, 1996, pp. 111-122.
10. H. Angerer, O. Ambacher, R. Dimitrov, T. Metzger, W. Rieger, and M. Stutzmann, "PEMBE-growth of gallium nitride on (0001) sapphire: A comparison to MOCVD grown GaN," MRS Internet J. Nitride Semiconduct. Res., vol. 1, 1996.
11. Z. Yang, L. K. Li, and W. I. Wang, "GaN grown by molecular beam epitaxy at high growth rates using ammonia as the nitrogen source," Appl. Phys. Lett., vol. 67, pp. 1686-1688, 1995.
12. W. Kim, Ö. Aktas, A. E. Botcharev, A. Salavdor, S. N. Mohammad, and H. Morkoç, "Reactive molecular beam epitaxy of wurtzite GaN: Materials characteristics and growth kinetics," J. Appl. Phys., vol. 79, pp. 7657-7666, 1996.
13. 3," Appl. Phys. Lett., vol. 72, pp. 82-84, 1998.
14. N. Grandjean, J. Massies, P. Vennéguès, M. Leroux, F. Demangeot, M. Renucci, and J. Frandon, "Molecular-beam epitaxy of gallium nitride on (0001) sapphire substrates using ammonia," J. Appl. Phys., vol. 83, pp. 1379-1383, 1998.
15. M. Mosca, J.-L. Reverchon, N. Grandjean, F. Omnès, J.-Y. Duboz, I. Ribet, and M. Tauvy, "Solar blind (Al,Ga)N metal-semiconductor-metal devices for high performance flame detection," in Proc. Materials Res. Soc. Symp. vol. 764, 2003, pp. 315-320.
16. 1-xN films." Appl. Phys. Lett., vol. 71, pp. 1504-1506, 1997.
17. D. Huang, M. A. Resnchikov, P. Visconti, F. Yun, A. A. Baski, T. King, H. Morkoç, J. Jasinski, Z. Liliental-Weber, and C. W. Litton, "Comparative study of Ga- and N-polar GaN films grown on sapphire substrates by molecular beam epitaxy," J. Vac. Sci. Technol. B, vol. 20, pp. 2256-2264, 2002.
18. 0.9M layered structures," Jpn. J. Appl. Phys., vol. 30, pp. 1924-1927, 1991.
19. E. Monroy, F. Calle, J. L. Pan, E. Muñoz, M. Vendú, F. J. Sánchez, M. T. Montojo, F. Omnès, Z. Bougrioua, I. Moerman, and E. San Andrés, "Effect of dielectric layers on the performance of AIGaN-based UV Schottky ptotodiodes," Phys. Stat. Sol. A, vol. 188, pp. 307-310, 2001.
20. J.-Y. Duboz, J.-L. Reverchon, D. Adam. B. Damilano, F. Semond. N. Grandjean, and J. Massies, "High performance solar blind detectors based on AlGaN grown by MBE on Si," Phys. Stat. Sol. A, vol. 188, pp. 325-328, 2001.