Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates

Microelectronics Reliability

Volumn 43, Issue 9-11, 2003, Pages 1713-1718

  Curutchet, A ^a   Malbert, N ^a   Labat, N ^a   Touboul, A ^a   Gaquiere C ^b   Minko, A ^b   Uren, M ^c  

^a UNIVERSITÉ BORDEAUX 1   (France)

^b INSTITUT D ELECTRONIQUE   (France)

^c QINETIQ   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GALLIUM NITRIDE; LEAKAGE CURRENTS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE;

DRAIN NOISE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0043195443     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00339-1     Document Type: Conference Paper

References (6)

1. Y. Cordier and al, AlGaN/GaN HEMTs on resistive silicon (111) substrate grown by gas-source MBB, Electron Lett., Vol.38, pp91-92, jan. 2002.
2. L.K.J Vandamme, Noise as diagnostic tool for quality and reliability of electronic devices, IEEE Trans. Electron Devices, Vol. 41, pp 2176-2187, Nov 1994
3. M.Uren and Al. Channel Mobility in AlGaN/GaN HFETs on SiC and Sapphire Substrates. Phys. Stat. Sol.Vol. 194, n°2, pp 468-471, 2002.
4. S. Rumyantsev and al, Low-frequency noise in AlGaN/GaN HFET on SiC and Sapphire substrates, Journal of Applied Physics, Vol 87, No 4, 15 February 2000
5. A.Baladin and al, Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications, IEEE Trans. On Microwave Theory and Techniques, Vol. 47, N°8, August 1999
6. S.L. Rumyantsev and al, On the low frequency noise mechanisms in GaN/AlGaN HFETS, Semicond. Sci. Technol. 18, pp 589-593, 2003.